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M30620FCAFP 数据表(PDF) 198 Page - Mitsubishi Electric Semiconductor |
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M30620FCAFP 数据表(HTML) 198 Page - Mitsubishi Electric Semiconductor |
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198 / 274 page ![]() Mitsubishi microcomputers M16C / 62A Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Timing (Vcc = 3V) 198 Read timing Write timing BCLK CSi ALE RD 4ns.min 4ns.min Hi–Z DB 80ns.min 0ns.min ADi BHE td(BCLK–WR) 60ns.max th(BCLK–WR) 0ns.min BCLK CSi td(BCLK–CS) 60ns.max td(BCLK–AD) ALE th(BCLK–ALE) th(BCLK–CS) 4ns.min tcyc 0ns.min th(WR–CS) 0ns.min th(WR–AD) ADi BHE td(BCLK–DB) 4ns.min th(BCLK–DB) td(DB–WR) (tcyc–80)ns.min 0ns.min th(WR–DB) DBi th(RD–AD) 0ns.min td(BCLK–ALE) 60ns.max tSU(DB–RD) Memory Expansion Mode and Microprocessor Mode (When accessing external memory area with wait) Measuring conditions : • VCC=3V • Input timing voltage : Determined with VIL=0.48V, VIH=1.5V • Output timing voltage : Determined with VOL=1.5V, VOH=1.5V WR,WRL, WRH td(BCLK–CS) 60ns.max th(RD–CS) tcyc td(BCLK–AD) 60ns.max th(BCLK–AD) –4ns.min th(BCLK–ALE) 60ns.max td(BCLK–RD) th(BCLK–RD) 0ns.min tac2(RD–DB) th(RD–DB) 0ns.min th(BCLK–AD) 60ns.max td(BCLK–ALE) 60ns.max –4ns.min 80ns.max th(BCLK–CS) 4ns.min VCC = 3V Figure 1.23.11. VCC = 3V timing diagram (4) |
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