| 制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
1SS372
|
121Kb/2P
|
DIODE (HIGH SPEED SWITCHING APPLICATION)
|
Zhaoxingwei Electronics... |
1SS372
|
630Kb/1P
|
Schottky Diodes
|
Micro Commercial Compon... |
1SS372
|
309Kb/2P
|
100 mA Schottky Barrier Diode10 Volts
|
Won-Top Electronics |
1SS372
|
51Kb/4P
|
SURFACE MOUNT SCHOTTKY BARRIER DIODE
April, 2012
|
Galaxy Semi-Conductor H... |
1SS372
|
111Kb/2P
|
Schottky Barrier Diode
|
Guangdong Kexin Industr... |
1SS372
|
43Kb/1P
|
HIGH SPEED SWITCHING DIODE
|
Shenzhen Jin Yu Semicon... |
1SS372
|
241Kb/1P
|
SCHOTTKY BARRIER DIODE
|
Shenzhen Luguang Electr... |
1SS372
|
247Kb/1P
|
Schottky Barrier Diodes
|
Jiangsu Changjiang Elec... |
1SS372
|
741Kb/4P
|
SCHOTTKY BARRIER DIODE
|
Galaxy Semi-Conductor H... |
1SS372
|
131Kb/2P
|
Schottky Barrier Diode
|
|
1SS372
|
106Kb/2P
|
Schottky Barrier Diode
|
DONGGUAN YOU FENG WEI E... |
1SS372
|
558Kb/3P
|
Schottky Barrier Diode
|
Won-Top Electronics |
1SS372-T1
|
51Kb/4P
|
SURFACE MOUNT SCHOTTKY BARRIER DIODE
April, 2012
|
Toshiba Semiconductor |
1SS372
|
212Kb/3P
|
High Speed Switching Application
|
|
1SS372
|
223Kb/3P
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Galaxy Semi-Conductor H... |
1SS372
|
131Kb/2P
|
Schottky Barrier Diode
|
|
1SS372
|
106Kb/2P
|
Schottky Barrier Diode
|
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