| 制造商 | 部件名 | 数据表 | 功能描述 |
Fuji Electric |
2SK3651-01R
|
110Kb/4P
|
N-CHANNEL SILICON POWER MOSFET
|
Inchange Semiconductor ... |
2SK3651-01R
|
318Kb/2P
|
isc N-Channel MOSFET Transistor
|
| Search Partnumber :
Start with "2SK3651-01R" -
Total : 20 ( 1/1 Page) |
Fuji Electric |
2SK3650-01L
|
261Kb/4P |
N-CHANNEL SILICON POWER MOSFET
|
Inchange Semiconductor ... |
2SK3650-01L
|
327Kb/2P |
isc N-Channel MOSFET Transistor
|
Fuji Electric |
2SK3650-01S
|
261Kb/4P |
N-CHANNEL SILICON POWER MOSFET
|
Inchange Semiconductor ... |
2SK3650-01S
|
400Kb/2P |
isc N-Channel MOSFET Transistor
|
|
2SK3650-01SJ
|
400Kb/2P |
isc N-Channel MOSFET Transistor
|
Fuji Electric |
2SK3650-01SJ
|
261Kb/4P |
N-CHANNEL SILICON POWER MOSFET
|
Guangdong Kexin Industr... |
2SK3652
|
42Kb/2P |
N-channel Enhancement Mode MOSFET
|
Renesas Technology Corp |
2SK3653
|
187Kb/8P |
JUNCTION FIELD EFFECT TRANSISTOR
2002 |
|
2SK3653B
|
294Kb/7P |
JUNCTION FIELD EFFECT TRANSISTOR
2004 |
NEC |
2SK3653B
|
123Kb/5P |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
|
2SK3653C
|
133Kb/5P |
JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
2SK3653C
|
277Kb/7P |
JUNCTION FIELD EFFECT TRANSISTOR
2007 |
Toshiba Semiconductor |
2SK3656
|
157Kb/5P |
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
|
|
2SK3658
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SK3658
|
667Kb/6P |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive
|
NEC |
2SK3659
|
77Kb/8P |
SWITCHING N-CHANNEL POWER MOSFET
|
Inchange Semiconductor ... |
2SK3659
|
323Kb/2P |
isc N-Channel MOSFET Transistor
|
Renesas Technology Corp |
2SK3659
|
218Kb/10P |
MOS FIELD EFFECT TRANSISTOR
2002 |
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