制造商 | 部件名 | 数据表 | 功能描述 |
Samsung semiconductor |
BN13-10001H
|
1Mb/43P
|
Color Monitor
September 1999
|
IDEC Corporation |
BN150W
|
1Mb/4P
|
Terminal Blocks
|
NEC |
BN1A3Q
|
109Kb/4P
|
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
Renesas Technology Corp |
BN1A3Q
|
263Kb/6P
|
COMPOUND TRANSISTOR
2002
|
NEC |
BN1A4M
|
136Kb/2P
|
The BN1A4M is designed for use in medium speed switching circuit.
|
BN1A4P
|
125Kb/2P
|
PNP SILICON TRANSISTOR
|
BN1A4Z
|
106Kb/4P
|
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
Renesas Technology Corp |
BN1A4Z
|
261Kb/6P
|
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
2002
|
NEC |
BN1F4M
|
133Kb/2P
|
The BN1F4M is designed for use in medium speed switching circuit.
|
BN1F4N
|
130Kb/2P
|
The BN1F4N is esiged for use in medium speed switching circuit.
|
Renesas Technology Corp |
BN1F4Z
|
239Kb/6P
|
COMPOUND TRANSISTOR
2002
|
NEC |
BN1F4Z
|
84Kb/4P
|
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
BN1L3M
|
103Kb/4P
|
COMPOUND TRANSISTOR
|
Renesas Technology Corp |
BN1L3M
|
257Kb/6P
|
COMPOUND TRANSISTOR
2002
|
NEC |
BN1L3N
|
85Kb/4P
|
COMPOUND TRANSISTOR
|
Renesas Technology Corp |
BN1L3N
|
240Kb/6P
|
COMPOUND TRANSISTOR
2002
|
NEC |
BN1L3Z
|
121Kb/2P
|
PNP SILICON TRANSISTOR
|
BN1L4L
|
123Kb/2P
|
PNP SILICON TRANSISTOR
|
BN1L4M
|
132Kb/2P
|
PNP SILICON TRANSISTOR
|
BN1L4Z
|
85Kb/4P
|
COMPOUND TRANSISTOR
|