制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A... |
IPD10N03LA
|
412Kb/11P
|
OptiMOS2 Power-Transistor
Rev. 1.3 2004-05-19
|
IPD10N03LA
|
403Kb/12P
|
OptiMOS짰2 Power-Transistor
Rev. 1.6 2006-05-15
|
IPD10N03LAG
|
403Kb/12P
|
OptiMOS짰2 Power-Transistor
Rev. 1.6 2006-05-15
|
Search Partnumber :
Start with "IPD10N03LA" -
Total : 98 ( 1/5 Page) |
Infineon Technologies A... |
IPD10N03LAG
|
403Kb/12P |
OptiMOS짰2 Power-Transistor
Rev. 1.6 2006-05-15 |
IPD100N04S4-02
|
160Kb/9P |
OptiMOS-T2 Power-Transistor
Rev. 1.0 2010-04-13 |
Inchange Semiconductor ... |
IPD100N04S4-02
|
334Kb/2P |
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPD100N04S4L-02
|
237Kb/9P |
OptiMOS®-T2 Power-Transistor
Rev. 1.0 2015-05-06 |
IPD100N06S4-03
|
168Kb/9P |
OptiMOS-T2 Power-Transistor
Rev. 1.0 2010-02-11 |
IPD105N03LG
|
1Mb/12P |
OptiMOS3 Power-Transistor
2010-04-01 revision:2.1 |
IPD105N04LG
|
236Kb/9P |
OptiMOS3 Power-Transistor
Rev. 1.0 2007-12-06 |
Samtec, Inc |
IPD1-02-D
|
269Kb/2P |
.100 SHROUDED CONTACT BODY
|
IPD1-02-D-K
|
269Kb/2P |
100 SHROUDED CONTACT BODY
|
IPD1-02-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-02-S
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-02-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-03-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-03-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-04-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-04-S-K
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
IPD1-04-S-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |