制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A... |
IPW60R099C6
|
2Mb/18P
|
Metal Oxide Semiconductor Field Effect Transistor
Rev. 2.1, 2010-02-09
|
IPW60R099C6
|
987Kb/18P
|
Metal Oxide Semiconductor Field Effect Transistor
2014-12-02 revision:2.2
|
Inchange Semiconductor ... |
IPW60R099C6
|
335Kb/2P
|
N-Channel MOSFET Transistor
|
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Start with "IPW60R099C6" -
Total : 14 ( 1/1 Page) |
Infineon Technologies A... |
IPW60R099C7
|
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
Inchange Semiconductor ... |
IPW60R099C7
|
335Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPW60R099C7
|
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
IPW60R099CP
|
355Kb/10P |
CoolMOS Power Transistor
Rev. 2.0 2006-06-19 |
IPW60R099CP
|
582Kb/11P |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
Rev. 2.1 2008-02-19 |
Inchange Semiconductor ... |
IPW60R099CP
|
336Kb/2P |
N-Channel MOSFET Transistor
|
IPW60R099CPA
|
376Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPW60R099CPA
|
477Kb/11P |
CoolMOS Power Transistor
Rev. 2.0 2010-02-15 |
IPW60R099CP
|
582Kb/11P |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
Rev. 2.1 2008-02-19 |
IPW60R099P6
|
2Mb/18P |
Increased MOSFET dv/dt ruggedness
Rev.2.1,2015-05-18 |
Inchange Semiconductor ... |
IPW60R099P6
|
335Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPW60R099P6
|
2Mb/18P |
600V CoolMOS??P6 Power Transistor
Rev.2.1,2015-05-18 |
Inchange Semiconductor ... |
IPW60R099P7
|
335Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPW60R099P7
|
1Mb/14P |
600V CoolMOS짧 P7 Power Transistor
Rev.2.0,2017-05-18 |