| 制造商 | 部件名 | 数据表 | 功能描述 |
Motorola, Inc |
IRF530
|
157Kb/2P
|
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
ON Semiconductor |
IRF530
|
192Kb/7P
|
N?묬hannel Enhancement?묺ode Silicon Gate
August, 2006 ??Rev. 2
|
STMicroelectronics |
IRF530
|
47Kb/3P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
June 1988
|
First Components Intern... |
IRF530
|
356Kb/6P
|
14.0A 100V N CHANNEL POWER MOSFET
|
Transys Electronics |
IRF530
|
481Kb/5P
|
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
Vishay Siliconix |
IRF530
|
282Kb/9P
|
Power MOSFET
Rev. B, 21-Mar-11
|
Samsung semiconductor |
IRF530
|
354Kb/6P
|
N-CHANNEL POWER MOSFETS
|
List of Unclassifed Man... |
IRF530
|
2Mb/31P
|
SEMICONDUCTORS
|
Fairchild Semiconductor |
IRF530
|
180Kb/6P
|
N-Channel Power MOSFETs, 20 A, 60-100 V
|
Vishay Siliconix |
IRF530
|
158Kb/8P
|
Power MOSFET
01-Jan-2022
|
International Rectifier |
IRF530
|
175Kb/6P
|
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
|
Inchange Semiconductor ... |
IRF530
|
332Kb/2P
|
isc N-Channel MOSFET Transistor
|
STMicroelectronics |
IRF530
|
281Kb/3P
|
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET
June 1988
|
Nanjing International G... |
IRF530
|
579Kb/2P
|
TO-220-3L Plastic-Encapsulate MOSFETS
|
STMicroelectronics |
IRF530
|
187Kb/3P
|
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
Harris Corporation |
IRF530
|
390Kb/5P
|
N-Channel Power MOSFETs Avalanche Energy Rated
|
Vishay Siliconix |
IRF530
|
608Kb/8P
|
Power MOSFET
Rev. A, 16-Jun-08
|
New Jersey Semi-Conduct... |
IRF530
|
153Kb/3P
|
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs
|
International Rectifier |
IRF5305
|
124Kb/8P
|
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
|
Kersemi Electronic Co.,... |
IRF5305
|
3Mb/8P
|
Advanced Process Technology
|
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