| 制造商 | 部件名 | 数据表 | 功能描述 |
 M-System Co.,Ltd. |
KMMLS-2AB-R
|
103Kb/3P
|
Plug-in Signal Conditioners K-UNIT
|
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Start with "MMLS-2AB-R" -
Total : 24 ( 1/2 Page) |
 NXP Semiconductors |
MML09211H
|
566Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML09211HT1
|
566Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML09212H
|
709Kb/27P |
Low Noise Amplifier
Rev. 3, 01/2018 |
|
MML09212HT1
|
709Kb/27P |
Low Noise Amplifier
Rev. 3, 01/2018 |
|
MML09231H
|
307Kb/12P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML09231HT1
|
307Kb/12P |
Low Noise Amplifier
Rev. 1, 9/2014 |
 Dc Components |
MML1225
|
237Kb/1P |
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts
|
 NXP Semiconductors |
MML20211H
|
580Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
 Freescale Semiconductor... |
MML20211HT1
|
513Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
|
 NXP Semiconductors |
MML20211HT1
|
580Kb/20P |
Low Noise Amplifier
Rev. 1, 9/2014 |
|
MML20242H
|
637Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 2, 9/2014 |
|
MML20242HT1
|
637Kb/20P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 2, 9/2014 |
|
MML25231H
|
418Kb/18P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 0, 4/2016 |
|
MML25231HT1
|
418Kb/18P |
Enhancement Mode pHEMT Technology (E--pHEMT)
Rev. 0, 4/2016 |
 Microsemi Corporation |
MML4400
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4401-GM2
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4401-GM3
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4402-GM2
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|
|
MML4402-GM3
|
339Kb/17P |
RoHS-Compliant Fast Surface Mount MRI Protection Diodes
|