| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
81N16L-R-AB3-I-R
|
204Kb/15P
|
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
|
| Search Partnumber :
Start with "N16L-R-AB3-I-R" -
Total : 36 ( 1/2 Page) |
 NanoAmp Solutions, Inc. |
N16L163WC2C
|
265Kb/11P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 16 bit
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|
N16L163WC2CT1
|
265Kb/11P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 16 bit
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N16L163WC2CT1-55IL
|
265Kb/11P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 16 bit
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N16L163WC2CZ1
|
265Kb/11P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 16 bit
|
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N16L163WC2CZ1-55IL
|
265Kb/11P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 횞 16 bit
|
 fujitsu semiconductor |
N16B-0558-B240
|
320Kb/7P |
Resistive Touch Panel Specification
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|
N16B-0558-B240
|
570Kb/7P |
STANDARD Resistive Touch Panel Specification 7-Wire Series
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N16B-0558-B270
|
453Kb/7P |
STANDARD Resistive Touch Panel Specification
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N16B-0558-B720
|
320Kb/7P |
Resistive Touch Panel Specification
|
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N16B-0558-B720
|
570Kb/7P |
STANDARD Resistive Touch Panel Specification 7-Wire Series
|
|
N16B-0558-B730
|
453Kb/7P |
STANDARD Resistive Touch Panel Specification
|
 NanoAmp Solutions, Inc. |
N16D1618LPA
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
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N16D1618LPAC2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
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N16D1618LPAC2-60I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAC2-75I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAT2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAT2-60I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
|
N16D1618LPAT2-75I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAZ2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|