| 制造商 | 部件名 | 数据表 | 功能描述 |
 Cree, Inc |
PTFB201402FC
|
595Kb/14P
|
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
|
|
PTFB210801FA
|
636Kb/11P
|
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
|
|
PTFB211503FL
|
578Kb/13P
|
Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz
|
|
PTFB212503FL
|
553Kb/13P
|
Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz
|
|
PTFB213004F
|
528Kb/16P
|
High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz
|
|
PTFB213208FV
|
659Kb/13P
|
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
|