制造商 | 部件名 | 数据表 | 功能描述 |
 Renesas Technology Corp |
UPG2250T5N
|
261Kb/13P
|
GaAs INTEGRATED CIRCUIT
2008
|
 California Eastern Labs |
UPG2250T5N
|
313Kb/12P
|
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
 Renesas Technology Corp |
UPG2250T5N-E2
|
261Kb/13P
|
GaAs INTEGRATED CIRCUIT
2008
|
 California Eastern Labs |
UPG2250T5N-E2
|
313Kb/12P
|
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
 Renesas Technology Corp |
UPG2250T5N-E2-A
|
261Kb/13P
|
GaAs INTEGRATED CIRCUIT
2008
|
 California Eastern Labs |
UPG2250T5N-E2-A
|
313Kb/12P
|
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
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Total : 16 ( 1/1 Page) |
 California Eastern Labs |
UPG2250T5N-E2
|
313Kb/12P |
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
 Renesas Technology Corp |
UPG2250T5N-E2
|
261Kb/13P |
GaAs INTEGRATED CIRCUIT
2008 |
 California Eastern Labs |
UPG2250T5N-E2-A
|
313Kb/12P |
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
 Renesas Technology Corp |
UPG2250T5N-E2-A
|
261Kb/13P |
GaAs INTEGRATED CIRCUIT
2008 |
UPG2251T6M
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2251T6M-E2
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2251T6M-E2-A
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2253T6S
|
258Kb/14P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |
 California Eastern Labs |
UPG2253T6S
|
557Kb/11P |
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
UPG2253T6S-E2
|
557Kb/11P |
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
 Renesas Technology Corp |
UPG2253T6S-E2
|
258Kb/14P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |
 California Eastern Labs |
UPG2253T6S-E2-A
|
557Kb/11P |
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
 Renesas Technology Corp |
UPG2253T6S-E2-A
|
258Kb/14P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |
UPG2255T6N
|
255Kb/13P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |