制造商 | 部件名 | 数据表 | 功能描述 |
 Toshiba Semiconductor |
TC581282A
|
507Kb/31P
|
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
TC581282AXB
|
507Kb/31P
|
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
TC58128AFT
|
617Kb/33P
|
128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM
|
TC5816BDC
|
1Mb/36P
|
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
|
TC5816BFT
|
1Mb/36P
|
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
|
TC58256AFT
|
345Kb/33P
|
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TC58256FT
|
1Mb/33P
|
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
TC58256FTI
|
1Mb/33P
|
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
TC5832DC
|
1Mb/38P
|
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
TC5832FT
|
1Mb/38P
|
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
|
TC58512FT
|
420Kb/43P
|
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58A040
|
1Mb/30P
|
4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
|
TC58A040F
|
1Mb/30P
|
4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
|
TC58BVG2S0HBAI6
|
2Mb/53P
|
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2018-06-01C
|
TC58DAM72A1FT00
|
369Kb/34P
|
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TC58DAM72F1FT00
|
369Kb/34P
|
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TC58DAM82A1FT00
|
369Kb/34P
|
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TC58DAM82F1FT00
|
369Kb/34P
|
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TC58DVG02A1FT00
|
453Kb/44P
|
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58DVG02D5BAI4
|
67Kb/3P
|
NAND Flash Memory(SLC Middle Capacity)
|