| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
C8A50Z4
|
364Kb/9P |
RF Power LDMOS Transistor
|
 Anaren Microwave |
C8A50Z4A
|
103Kb/3P |
Surface Mount Termination 8 Watts, 50廓
|
 NXP Semiconductors |
C8A50Z4A
|
379Kb/9P |
RF Power GaN Transistor
|
|
C8A50Z4A
|
389Kb/16P |
RF Power LDMOS Transistor
|
|
C8A50Z4A
|
385Kb/17P |
RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET
Rev. 1, 11/2022 |
|
C8A50Z4A
|
362Kb/20P |
RF Power LDMOS Transistor
Rev. 2, 05/2022 |
|
C8A50Z4A
|
414Kb/18P |
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020 |
 Anaren Microwave |
C8A50Z4B
|
423Kb/2P |
Surface Mount Termination
|
 NXP Semiconductors |
C8A50Z4B
|
319Kb/13P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 09/2018 |
|
C8A50Z4B
|
466Kb/13P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 11/2018 |
|
C8A50Z4B
|
470Kb/14P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 03/2021 |
 Fox Electronics |
C8AQ
|
222Kb/2P |
10 x 4.5mm SMD Crystal
|