制造商 | 部件名 | 数据表 | 功能描述 |
Samsung semiconductor |
K4E661611D-TC50
|
882Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612B
|
885Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612B-L
|
885Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612B-TC
|
885Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-45
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-50
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-60
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-L
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-L45
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-L50
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-L60
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-T
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-T45
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-T50
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-T60
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-TC
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-TC45
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-TC50
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
K4E661612C-TC60
|
884Kb/36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|