| 制造商 | 部件名 | 数据表 | 功能描述 |
 ON Semiconductor |
NDD01N60
|
136Kb/8P |
N-Channel Power MOSFET 600 V, 8.5 ohm
January, 2013 ??Rev. 2 |
|
NDD01N60
|
136Kb/8P |
N-Channel Power MOSFET 600 V, 8.5
January, 2013 ??Rev. 2 |
 VBsemi Electronics Co.,... |
NDD01N60
|
1Mb/9P |
N-Channel 650V (D-S) MOSFET
|
 Inchange Semiconductor ... |
NDD01N60
|
298Kb/2P |
isc N-Channel MOSFET Transistor
|
|
NDD01N60-1
|
317Kb/2P |
isc N-Channel MOSFET Transistor
|
 ON Semiconductor |
NDD01N60-1G
|
136Kb/8P |
N-Channel Power MOSFET 600 V, 8.5
January, 2013 ??Rev. 2 |
 VBsemi Electronics Co.,... |
NDD01N60-1G
|
1Mb/9P |
N-Channel 650V (D-S)Power MOSFET
|
 ON Semiconductor |
NDD01N60.1G
|
136Kb/8P |
N-Channel Power MOSFET 600 V, 8.5 ohm
January, 2013 ??Rev. 2 |
|
NDD01N60T4G
|
136Kb/8P |
N-Channel Power MOSFET 600 V, 8.5 ohm
January, 2013 ??Rev. 2 |
 VBsemi Electronics Co.,... |
NDD01N60T4G
|
1Mb/9P |
N-Channel 650V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
NDD01N60T4G
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 ON Semiconductor |
NDD02N40
|
108Kb/9P |
N-Channel Power MOSFET
July, 2014 ??Rev. 4 |
 VBsemi Electronics Co.,... |
NDD02N40
|
1Mb/9P |
N-Channel 650V (D-S) MOSFET
|
 Inchange Semiconductor ... |
NDD02N40
|
299Kb/2P |
isc N-Channel MOSFET Transistor
|
|
NDD02N40-1
|
317Kb/2P |
isc N-Channel MOSFET Transistor
|
 ON Semiconductor |
NDD02N40-1G
|
108Kb/9P |
N-Channel Power MOSFET
July, 2014 ??Rev. 4 |
|
NDD02N40T4G
|
108Kb/9P |
N-Channel Power MOSFET
July, 2014 ??Rev. 4 |
 SHENZHEN DOINGTER SEMIC... |
NDD02N40T4G
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 ON Semiconductor |
NDD02N60Z
|
146Kb/10P |
N-Channel Power MOSFET 600 V, 4.8
July, 2013 ??Rev. 7 |
 Inchange Semiconductor ... |
NDD02N60Z
|
299Kb/2P |
isc N-Channel MOSFET Transistor
|