| 制造商 | 部件名 | 数据表 | 功能描述 |
Mitsubishi Electric Sem... |
RM400DG-66S
|
79Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM400DG-90F
|
171Kb/5P |
HIGH POWER SWITCHING USE INSULATED
|
Powerex Power Semicondu... |
RM400DY-24S
|
803Kb/4P |
Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts
|
|
RM400DY-66S
|
40Kb/2P |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem... |
RM400DY-66S
|
35Kb/3P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM400DY-66S
|
66Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM400DY-66S
|
66Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM400HA-20S
|
48Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
|
RM400HA-24S
|
48Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
RM400HA-24S
|
70Kb/4P |
Super Fast Recovery Single Diode Module (400 Amperes/1200 Volts)
|
|
RM400HA-34S
|
80Kb/4P |
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts)
|
Mitsubishi Electric Sem... |
RM400HV-34S
|
69Kb/3P |
HIGH SPEED SWITCHING USE INSULATED TYPE
|
Rectron Semiconductor |
RM400N40TL
|
178Kb/7P |
N-Channel Enhancement Mode Power MOSFET
2023-06/59 REV:O |
|
RM4077S8
|
278Kb/9P |
N and P-Channel Enhancement Mode Power MOSFET
2018-11/57 REV:O |
|
RM40N100LD
|
325Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
RM40N200TI
|
203Kb/7P |
N-Channel Enhancement Mode Power MOSFET
2019-03/15 REV:O |
|
RM40N40DF
|
262Kb/7P |
N-Channel Enhancement Mode Power MOSFET
2019-08/15 REV:B |
|
RM40N40LD
|
265Kb/6P |
N-Channel Enhancement Mode Power MOSFET
2020-09/83 REV:B |
|
RM40N600T7
|
1Mb/7P |
600V, 40A, Trench FS II IGBT
2016-08 REV:O15 |
|
RM40P07
|
236Kb/7P |
NCE P-Channel Enhancement Mode Power MOSFET
|
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