STGE50NC60VD 数据表, PDF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGE50NC60WD	289Kb/14P	N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
	STGE50NB60HD	47Kb/6P	N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT
	STGE200NB60S	274Kb/13P	N-CHANNEL 150A - 600V - ISOTOP PowerMESH??IGBT
Inchange Semiconductor ...	STGE200NB60S	600Kb/4P	IGBT
Advantech Co., Ltd.	STG-UDM001HA-HAE	336Kb/1P	Advantech Industrial USB DOM Industrial bNAND USB DOM
Advantech Co., Ltd.	STG-UDM002HA-HAE	336Kb/1P	Advantech Industrial USB DOM Industrial bNAND USB DOM
Seoul Semiconductor	STG0A12CE	869Kb/25P	Applicable for automotive interior light
	STG0A12CE	865Kb/24P	Applicable for automotive interior light
	STG0A2PD	779Kb/19P	Mid-Power LED -3528 Series
STMicroelectronics	STG1218	1Mb/29P	Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input compatible December 2021 Rev 3
	STG15M120F3D7	263Kb/10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing Rev 3 - August 2022
	STG15M120F3D8	224Kb/8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing Rev 1 - January 2022
Surge Components	STG1K152MND2535	341Kb/3P	High ripple current, High reliability
STMicroelectronics	STG200G65FD8AG	505Kb/11P	Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing Rev 1 - July 2023
STMicroelectronics	STG200M65F2D8AG	292Kb/11P	Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing May 2021 Rev 4
SamHop Microelectronics...	STG2017	651Kb/7P	Dual N-Channel E nhancement Mode Field Effect Transistor
	STG2454	123Kb/7P	Super high dense cell design for low RDS(ON).
	STG2507	649Kb/7P	Dual P-Channel E nhancement Mode Field Effect Transistor
STMicroelectronics	STG25H120F2D7	252Kb/10P	1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing May 2015 Rev 1
STMicroelectronics	STG3155	383Kb/18P	Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

STGE50NC60VD 数据表, PDF

STGE50NC60VD Datasheet ,PDF

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