VS-GC0-R 数据表, PDF

制造商	部件名	数据表	功能描述
Vishay Siliconix	VS-GA100NA60UP	234Kb/9P	Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 01-Feb-12
	VS-GA100TS120UPBF	263Kb/10P	Very low conduction and switching losses 26-Mar-12
	VS-GA100TS60SFPBF	181Kb/7P	Optimized for hard switching speed 10-Jun-15
	VS-GA100TS60SFPBF	153Kb/7P	“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A 10-Jun-15
	VS-GA100TS60SFPBF	153Kb/7P	“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A 10-Jun-15
	VS-GA200HS60S1PBF	154Kb/7P	Very low conduction losses 10-Jun-15
	VS-GA200SA60UP	153Kb/8P	Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A 26-Oct-11
	VS-GA200TH60S	165Kb/7P	High short circuit capability 10-Jun-15
	VS-GA250SA60S	288Kb/9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-May-16
	VS-GA300TD60S	140Kb/8P	Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 300 A 11-Dec-17
	VS-GA400TD60S	140Kb/8P	Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 400 A 11-Dec-17
	VS-GB100DA60UP	170Kb/9P	Very low internal inductance 13-Sep-13
	VS-GB100LH120N	166Kb/7P	High short circuit capability, self limiting to 6 x IC 10-Jun-15
	VS-GB100LP120N	123Kb/7P	Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100NH120N	164Kb/7P	Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100TH120N	163Kb/7P	Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100TH120U	167Kb/8P	Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A 10-Jun-15
	VS-GB100TP120N	97Kb/6P	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A 10-Jun-15
	VS-GB100TS60NPBF	213Kb/9P	INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A 10-Jun-15
	VS-GB100YG120NT	385Kb/9P	IGBT ECONO3 Module, 100 A 22-Apr-16

VS-GC0-R 数据表, PDF

VS-GC0-R Datasheet ,PDF

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