| 制造商 | 部件名 | 数据表 | 功能描述 |
 Renesas Technology Corp |
NESG2031M16-T3
|
336Kb/14P |
NPN SILICON GERMANIUM RF TRANSISTOR
2009 |
 NEC |
NESG2031M16-T3
|
119Kb/12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2031M16-T3-A
|
336Kb/14P |
NPN SILICON GERMANIUM RF TRANSISTOR
2009 |
 NEC |
NESG2031M16-T3-A
|
119Kb/12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 California Eastern Labs |
NESG2031M16-T3-A
|
230Kb/3P |
HIGH FREQUENCY TRANSISTOR
|
|
NESG2021M05
|
729Kb/14P |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
 Renesas Technology Corp |
NESG2021M05
|
159Kb/14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
|
NESG2021M05-A
|
159Kb/14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
|
NESG2021M05-T1
|
159Kb/14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
|
NESG2021M05-T1-A
|
159Kb/14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
 California Eastern Labs |
NESG2021M05-T1-A
|
729Kb/14P |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
 Renesas Technology Corp |
NESG2021M16
|
337Kb/14P |
NPN SILICON GERMANIUM RF TRANSISTOR
2009 |
 California Eastern Labs |
NESG2021M16
|
861Kb/11P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 NEC |
NESG2021M16
|
120Kb/12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 California Micro Device... |
NESG2021M16
|
224Kb/3P |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
 Renesas Technology Corp |
NESG2021M16-A
|
337Kb/14P |
NPN SILICON GERMANIUM RF TRANSISTOR
2009 |
 California Eastern Labs |
NESG2021M16-A
|
861Kb/11P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 NEC |
NESG2021M16-A
|
120Kb/12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2021M16-T3
|
337Kb/14P |
NPN SILICON GERMANIUM RF TRANSISTOR
2009 |
 California Eastern Labs |
NESG2021M16-T3
|
861Kb/11P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|