IPBD-02-S-K 数据表, PDF

捷径	IPBD-02-S-K(1) 被推存结果.
如同	IPBD-02-S-K(1)
开始	No Data
结尾	No Data
包括	No Data

制造商

制造商	部件名	数据表	功能描述
Samtec, Inc	IPBD-02-S-K	257Kb/1P	(4.19 mm) .165" PITCH • DISCRETE WIRE CABLE & COMPONENTS

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPB025N08N3G	559Kb/9P	OptiMOS3 Power-transistor 2009-12-11 revision:1.2
	IPB025N08N3G	848Kb/10P	OptiMOS Power-Transistor, 80 V 2016-03-31
	IPB025N08N3G	848Kb/10P	OptiMOS Power-Transistor, 80 V 2016-03-31
	IPB025N10N3	267Kb/9P	OptiMOS?? Power-Transistor Rev. 2.03 2009-12-11
	IPB025N10N3-G	267Kb/9P	OptiMOS?? Power-Transistor Rev. 2.03 2009-12-11
	IPB025N10N3G	267Kb/9P	OptiMOS?? Power-Transistor Rev. 2.03 2009-12-11
	IPB026N06N	1,021Kb/2P	New OptiMOS??40V and 60V 07 / 2012
	IPB026N06N	606Kb/9P	OptiMOSTM Power-Transistor Rev.2.2 2012-12-20
Inchange Semiconductor ...	IPB026N06N	243Kb/2P	isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPB026N10NF2S	960Kb/11P	StrongIRFETTM 2 Power-Transistor Rev. 2.0, 2022-09-23
Infineon Technologies A...	IPB027N10N3	536Kb/9P	3 Power-Transistor 2009-12-11 revision:2.4
Inchange Semiconductor ...	IPB027N10N3	244Kb/2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPB027N10N3G	220Kb/9P	OptiMOS짰3 Power-Transistor Rev. 2.4 2009-12-11
	IPB027N10N3GATMA1	536Kb/9P	3 Power-Transistor 2009-12-11 revision:2.4
	IPB027N10N5	1Mb/12P	N-channel, normal level Rev.2.1,2015-01-30
	IPB027N10N5	1,008Kb/11P	OptiMOS짧 5 Power-Transistor, 100 V Rev.2.2,2016-07-20
Inchange Semiconductor ...	IPB027N10N5	244Kb/2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPB027N10N5	1,008Kb/11P	OptiMOS짧 5 Power-Transistor, 100 V Rev.2.2,2016-07-20
Inchange Semiconductor ...	IPB029N06N3	299Kb/2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPB029N06N3-G	483Kb/11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2009-12-11

IPBD-02-S-K 数据表, PDF

IPBD-02-S-K Datasheet ,PDF

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