06035J2R7BBS 数据表, PDF

制造商	部件名	数据表	功能描述
NXP Semiconductors	06035J2R0BBS	468Kb/15P	Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014
	06035J2R2BBS	678Kb/15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J2R2BBS	901Kb/18P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J2R2BS	460Kb/21P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014
AVX Corporation	06035J0R1PBSTR	340Kb/26P	Thin-Film Technology
NXP Semiconductors	06035J0R4BBS	468Kb/15P	Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014
NXP Semiconductors	06035J0R6BS	497Kb/16P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016
TriQuint Semiconductor	06035J0R7ABSTR	747Kb/8P	Edge QAM Gain Stage
NXP Semiconductors	06035J0R7BBS	468Kb/15P	Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014
	06035J0R8BBS	468Kb/15P	Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014
	06035J0R8BBS	571Kb/14P	RF LDMOS Wideband Integrated Power Amplifiers
	06035J0R8BS	497Kb/16P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016
	06035J0R9BS	497Kb/16P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016
	06035J100GBS	678Kb/15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J100GBS	901Kb/18P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J1R8BBS	678Kb/15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J1R8BBS	901Kb/18P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	06035J1R8BS	460Kb/21P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014
	06035J1R8BS	181Kb/9P	Gallium Arsenide CATV Integrated Amplifier Module Rev. 8, 3/2007
AVX Corporation	06035J3R3BBTTR	458Kb/20P	Accu-F Accu-P Thin-Film RF/Microwave Capacitors

06035J2R7BBS 数据表, PDF

06035J2R7BBS Datasheet ,PDF