制造商 | 部件名 | 数据表 | 功能描述 |
List of Unclassifed Man... |
IRC40
|
875Kb/2P |
compact type metal clad wire wound resistors
|
Carlo Gavazzi Holding A... |
IRC40
|
2Mb/16P |
Proximity inductive sensors with rectangular housing and 5 positions rotatable head
04/07/2022 |
IRC40SF22M1NA
|
2Mb/16P |
Proximity inductive sensors with rectangular housing and 5 positions rotatable head
04/07/2022 |
IRC40SF22M1PA
|
2Mb/16P |
Proximity inductive sensors with rectangular housing and 5 positions rotatable head
04/07/2022 |
IRC40SN40M1NA
|
2Mb/16P |
Proximity inductive sensors with rectangular housing and 5 positions rotatable head
04/07/2022 |
IRC40SN40M1PA
|
2Mb/16P |
Proximity inductive sensors with rectangular housing and 5 positions rotatable head
04/07/2022 |
International Rectifier |
IRC4BC40F
|
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR
|
List of Unclassifed Man... |
IRC60
|
875Kb/2P |
compact type metal clad wire wound resistors
|
International Rectifier |
IRC630
|
229Kb/8P |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
|
IRC630PBF
|
1Mb/9P |
HEXFET POWER MOSFET
|
IRC634
|
228Kb/8P |
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRC634PRF
|
1Mb/9P |
HEXFET Power MOSFET
|
IRC640
|
228Kb/8P |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRC640PBF
|
1Mb/9P |
HEXFET POWER MOSFET
|
IRC644
|
225Kb/8P |
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
|
IRC730
|
223Kb/8P |
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
|
IRC740
|
221Kb/8P |
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)
|
List of Unclassifed Man... |
IRC80
|
875Kb/2P |
compact type metal clad wire wound resistors
|
International Rectifier |
IRC830
|
202Kb/9P |
Dynamic dv/df Rating
|
IRC830
|
222Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
|