| 制造商 | 部件名 | 数据表 | 功能描述 |
IXYS Corporation |
IXTT12N150HV
|
148Kb/4P |
N-Channel Enhancement Mode Fast Intrinsic Diode
|
|
IXTT140N075L2HV
|
257Kb/6P |
N-Channel Enhancement Mode Avalanche Rated
|
|
IXTT140N10P
|
170Kb/5P |
PolarHT?? Power MOSFET
|
|
IXTT140P10T
|
179Kb/6P |
P-Channel Enhancement Mode Avalanche Rated
|
|
IXTT16N10D2
|
178Kb/5P |
Depletion Mode MOSFET
|
|
IXTT16N10D2
|
201Kb/6P |
N-Channel MOSFET
|
|
IXTT16N10D2
|
201Kb/6P |
N-Channel MOSFET
|
|
IXTT16N20D2
|
166Kb/6P |
N-Channel MOSFET
|
|
IXTT16N20D2
|
178Kb/6P |
Depletion Mode MOSFET
|
|
IXTT16N20D2
|
166Kb/6P |
N-Channel MOSFET
|
|
IXTT16N50D2
|
176Kb/5P |
Depletion Mode MOSFETs
|
|
IXTT16N50D2
|
165Kb/6P |
N-Channel MOSFET
|
|
IXTT16P60P
|
137Kb/5P |
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode
|
|
IXTT170N10P
|
170Kb/5P |
PolarTM Power MOSFET
|
|
IXTT170N10P
|
170Kb/5P |
N-Channel Enhancement Mode Avalanche Rated
|
|
IXTT1N100
|
87Kb/2P |
High Voltage MOSFET
|
|
IXTT1N250HV
|
160Kb/5P |
N-Channel Enhancement Mode Fast Intrinsic Diode
|
|
IXTT1N300P3HV
|
220Kb/5P |
High Voltage Power MOSFET
2014 |
|
IXTT1N300P3HV
|
214Kb/5P |
N-Channel Enhancement Mode
|
|
IXTT1N450HV
|
156Kb/5P |
High Voltage Power MOSFET
|
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