| 制造商 | 部件名 | 数据表 | 功能描述 |
IXYS Corporation |
IXTT1N450HV
|
219Kb/6P |
High Voltage Power MOSFET
04/14 |
|
IXTT20N50D
|
163Kb/5P |
High Voltage MOSFET
|
|
IXTT20P50P
|
134Kb/5P |
P-Channel Enhancement Mode Avalanche Rated
|
|
IXTT24N50Q
|
565Kb/4P |
N-Channel Enhancement Mode
|
|
IXTT24P20
|
563Kb/5P |
Standard Power MOSFET
|
|
IXTT26N50P
|
343Kb/5P |
PolarHV Power MOSFET
|
|
IXTT26N60P
|
236Kb/5P |
PolarHV Power MOSFET
|
|
IXTT28N50Q
|
177Kb/4P |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
|
International Rectifier |
IXTT28N50Q
|
177Kb/4P |
Power MOSFETs Q-Class
|
IXYS Corporation |
IXTT2N170D2
|
159Kb/5P |
Depletion Mode MOSFET
|
|
IXTT2N300P3HV
|
208Kb/4P |
N-Channel Enhancement Mode
|
|
IXTT30N50L
|
148Kb/5P |
N-Channel Enhancement Mode
|
|
IXTT30N50L2
|
159Kb/6P |
N-Channel Power MOSFET
|
|
IXTT30N50L2
|
147Kb/5P |
Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode
|
|
IXTT30N50P
|
352Kb/5P |
N-Channel Enhancement Mode Avalanche Rated
|
|
IXTT30N60L2
|
147Kb/5P |
Linear L2 Power MOSFET with extended FBSOA
|
|
IXTT30N60P
|
357Kb/6P |
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
|
IXTT34N65X2HV
|
196Kb/6P |
Advance Technical Information
|
|
IXTT360N055T2
|
187Kb/6P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
|
IXTT36N50P
|
384Kb/5P |
PolarHV Power MOSFET
|
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