| 制造商 | 部件名 | 数据表 | 功能描述 |
Central Semiconductor C... |
SE9403
|
81Kb/1P |
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
|
|
SE9403
|
54Kb/1P |
Power Transistors
|
|
SE9404
|
81Kb/1P |
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
|
|
SE9404
|
54Kb/1P |
Power Transistors
|
|
SE9405
|
54Kb/1P |
Power Transistors
|
|
SE9405
|
81Kb/1P |
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
|
WILLAS ELECTRONIC CORP |
SE9435LT1
|
412Kb/4P |
30V P-Channel Enhancement-Mode MOSFET
|
NXP Semiconductors |
SE97
|
427Kb/55P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 07-29 January 2010 |
|
SE97
|
275Kb/53P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 06-17 August 2009 |
|
SE97
|
281Kb/54P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 05-6 August 2009 |
|
SE97B
|
401Kb/53P |
DDR memory module temp sensor with integrated SPD
Rev. 01-27 January 2010 |
|
SE97B
|
727Kb/8P |
Smart, simple solutions for the 12 most common design concerns
August 2011 |
|
SE97BTP
|
401Kb/53P |
DDR memory module temp sensor with integrated SPD
Rev. 01-27 January 2010 |
|
SE97PW
|
427Kb/55P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 07-29 January 2010 |
|
SE97PW
|
275Kb/53P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 06-17 August 2009 |
|
SE97PW
|
281Kb/54P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 05-6 August 2009 |
|
SE97TK
|
281Kb/54P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 05-6 August 2009 |
|
SE97TK
|
275Kb/53P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 06-17 August 2009 |
|
SE97TK
|
427Kb/55P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 07-29 January 2010 |
|
SE97TL
|
281Kb/54P |
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 05-6 August 2009 |
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand