制造商 | 部件名 | 数据表 | 功能描述 |
 Toshiba Semiconductor |
TC58FVT800F-12
|
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TC58FVT800F-85
|
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TC58FVT800FT-10
|
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TC58FVT800FT-12
|
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TC58FVT800FT-85
|
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TC58FVXB-10
|
555Kb/48P |
32-MBIT (4M 횞 8 BITS / 2M 횞 16 BITS) CMOS FLASH MEMORY
|
TC58FVXB-70
|
555Kb/48P |
32-MBIT (4M 횞 8 BITS / 2M 횞 16 BITS) CMOS FLASH MEMORY
|
TC58NS256DC
|
709Kb/33P |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 짰8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TC58NVG0S3AFT05
|
559Kb/33P |
1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM
|
TC58NVG0S3ETA00
|
486Kb/65P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
 KIOXIA Corporation |
TC58NVG0S3HBAI4
|
456Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
 Toshiba Semiconductor |
TC58NVG0S3HBAI4
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|
TC58NVG0S3HBAI4
|
868Kb/2P |
SLC NAND & BENAND Reliability and Performance
|
TC58NVG0S3HBAI4
|
2Mb/20P |
Flash Memory
Mar. 2016 |
 KIOXIA Corporation |
TC58NVG0S3HBAI6
|
499Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
 Toshiba Semiconductor |
TC58NVG0S3HBAI6
|
2Mb/20P |
Flash Memory
Mar. 2016 |
TC58NVG0S3HBAI6
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|
TC58NVG0S3HBAI6
|
868Kb/2P |
SLC NAND & BENAND Reliability and Performance
|
 KIOXIA Corporation |
TC58NVG0S3HTA00
|
448Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
 Toshiba Semiconductor |
TC58NVG0S3HTA00
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|