制造商 | 部件名 | 数据表 | 功能描述 |
 KIOXIA Corporation |
TC58BVG1S3HBAI4
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BVG1S3HBAI6
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BVG1S3HTA00
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BVG1S3HTAI0
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BVG2S0HBAI4
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
 Toshiba Semiconductor |
TC58BVG2S0HBAI6
|
2Mb/53P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2018-06-01C |
 KIOXIA Corporation |
TC58BVG2S0HTA00
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BVG2S0HTAI0
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG0S3HBAI4
|
1Mb/46P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG0S3HBAI6
|
1Mb/46P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG1S3HBAI4
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG1S3HBAI6
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG2S0HBAI4
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58BYG2S0HBAI6
|
1Mb/53P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58CVG0S3HRAIG
|
2Mb/43P |
1Gb, 3.3V Serial Interface NAND
|
TC58CVG0S3HRAIJ
|
1Mb/49P |
1Gb 3.3V Serial Interface NAND
|
TC58CVG1S3HRAIG
|
2Mb/43P |
2Gb, 3.3V Serial Interface NAND
|
TC58CVG1S3HRAIJ
|
1Mb/49P |
2Gb, 3.3V Serial Interface NAND
|
TC58CVG2S0HRAIG
|
2Mb/44P |
4Gb 3.3V Serial Interface NAND
|
TC58CVG2S0HRAIJ
|
2Mb/49P |
4Gb 3.3V Serial Interface NAND
|