制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
TC59LM806CFT-60
|
2Mb/38P |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TC59LM814CFT
|
2Mb/38P |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TC59LM814CFT-50
|
2Mb/38P |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TC59LM814CFT-55
|
2Mb/38P |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TC59LM814CFT-60
|
2Mb/38P |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TC59LM818DMB-33
|
727Kb/57P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM818DMB-40
|
727Kb/57P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM818DMG-33
|
726Kb/57P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM818DMG-40
|
726Kb/57P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM836DKB-30
|
833Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM836DKB-33
|
833Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM836DKB-40
|
833Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2
|
TC59LM836DKG-30
|
841Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM836DKG-33
|
841Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM836DKG-40
|
841Kb/65P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM906AMG
|
798Kb/59P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM906AMG-37
|
798Kb/59P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM906AMG-50
|
798Kb/59P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM913AMB-50
|
506Kb/46P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TC59LM913AMG-50
|
500Kb/46P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|