| 制造商 | 部件名 | 数据表 | 功能描述 |
Taiwan Semiconductor Co... |
TSUP10M60SH
|
432Kb/5P |
10A, 60V Trench Schottky Rectifier
|
|
TSUP15M45SH
|
432Kb/5P |
15A, 45V Trench Schottky Rectifier
|
|
TSUP15M60SH
|
433Kb/5P |
15A, 60V Trench Schottky Rectifier
|
|
TSUP5M45SH
|
432Kb/5P |
5A, 45V Trench Schottky Rectifier
|
|
TSUP5M60SH
|
432Kb/5P |
5A, 60V Trench Schottky Rectifier
|
|
TSUP8M45SH
|
425Kb/5P |
8A, 45V Trench Schottky Rectifiers
|
|
TSUP8M45SHM2G
|
425Kb/5P |
8A, 45V Trench Schottky Rectifiers
|
|
TSUP8M45SHM3G
|
425Kb/5P |
8A, 45V Trench Schottky Rectifiers
|
|
TSUP8M60SH
|
432Kb/5P |
8A, 60V Trench Schottky Rectifiers
|
|
TSUP8M60SHM2G
|
432Kb/5P |
8A, 60V Trench Schottky Rectifiers
|
|
TSUP8M60SHM3G
|
432Kb/5P |
8A, 60V Trench Schottky Rectifiers
|
Vishay Siliconix |
TSUS3400
|
108Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs
Rev. 1.5, 25-Aug-11 |
|
TSUS4300
|
115Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs
01-Jan-2021 |
|
TSUS4300
|
80Kb/5P |
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Rev. 2, 20-May-99 |
|
TSUS4300
|
110Kb/5P |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Rev. 1.6, 04-Sep-08 |
|
TSUS4300
|
110Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs
Rev. 1.9, 20-Oct-15 |
|
TSUS4300
|
110Kb/5P |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Rev. 1.6, 04-Sep-08 |
|
TSUS4300
|
110Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs
Rev. 1.9, 20-Oct-15 |
|
TSUS4300
|
115Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs
01-Jan-2021 |
|
TSUS4400
|
81Kb/5P |
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Rev. 2, 20-May-99 |
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