| 制造商 | 部件名 | 数据表 | 功能描述 |
Renesas Technology Corp |
UPD5731T6M-E2
|
328Kb/13P |
CMOS INTEGRATED CIRCUIT
2008 |
|
UPD5731T6M-E2-A
|
328Kb/13P |
CMOS INTEGRATED CIRCUIT
2008 |
NEC |
UPD5738T6N
|
125Kb/11P |
WIDE BAND DPDT SWITCH
|
Renesas Technology Corp |
UPD5738T6N
|
254Kb/13P |
CMOS INTEGRATED CIRCUIT
2009 |
NEC |
UPD5738T6N-E2
|
125Kb/11P |
WIDE BAND DPDT SWITCH
|
Renesas Technology Corp |
UPD5738T6N-E2
|
254Kb/13P |
CMOS INTEGRATED CIRCUIT
2009 |
NEC |
UPD5738T6N-E2-A
|
125Kb/11P |
WIDE BAND DPDT SWITCH
|
Renesas Technology Corp |
UPD5738T6N-E2-A
|
254Kb/13P |
CMOS INTEGRATED CIRCUIT
2009 |
California Eastern Labs |
UPD5738T6N
|
524Kb/10P |
WIDE BAND DPDT SWITCH
|
Renesas Technology Corp |
UPD5739T7A
|
266Kb/14P |
SiGe/CMOS Integrated Circuit 4횞2 IF Switch Matrix with Gain and Tone/Voltage Controller
|
|
UPD5739T7A-E1
|
266Kb/14P |
SiGe/CMOS Integrated Circuit 4횞2 IF Switch Matrix with Gain and Tone/Voltage Controller
|
|
UPD5739T7A-E1-A
|
266Kb/14P |
SiGe/CMOS Integrated Circuit 4횞2 IF Switch Matrix with Gain and Tone/Voltage Controller
|
|
UPD5740T6N
|
403Kb/22P |
SiGe BiCMOS INTEGRATED CIRCUIT
2009 |
|
UPD5740T6N-E2
|
403Kb/22P |
SiGe BiCMOS INTEGRATED CIRCUIT
2009 |
|
UPD5740T6N-E2-A
|
403Kb/22P |
SiGe BiCMOS INTEGRATED CIRCUIT
2009 |
|
UPD5741T6J
|
201Kb/9P |
MOS ANALOG INTEGRATED CIRCUIT
2008 |
|
UPD5741T6J-E4
|
201Kb/9P |
MOS ANALOG INTEGRATED CIRCUIT
2008 |
|
UPD5741T6J-E4-A
|
201Kb/9P |
MOS ANALOG INTEGRATED CIRCUIT
2008 |
|
UPD5742T6J
|
200Kb/9P |
MOS ANALOG INTEGRATED CIRCUIT
2009 |
|
UPD5742T6J-E4
|
200Kb/9P |
MOS ANALOG INTEGRATED CIRCUIT
2009 |
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