2SB1260-R
AI

### Overview of the 2SB1260-R
The **2SB1260-R** is a Silicon PNP Epitaxial Planar Transistor designed primarily for power amplification and switching applications. It is known for its high current capacity and low saturation voltage, making it ideal for battery-driven portable equipment.
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### Technical Specifications
The "R" suffix typically refers to the **hFE (DC Current Gain)** classification, which usually falls within a specific range defined by the manufacturer (ROHM Semiconductor is the primary producer).
| Parameter | Symbol | Maximum Rating | Unit |
| :--- | :--- | :--- | :--- |
| Collector-Base Voltage | $V_{CBO}$ | -80 | V |
| Collector-Emitter Voltage | $V_{CEO}$ | -80 | V |
| Emitter-Base Voltage | $V_{EBO}$ | -5 | V |
| Collector Current (DC) | $I_C$ | -1 | A |
| Collector Current (Pulse) | $I_{CP}$ | -2 | A |
| Total Power Dissipation | $P_D$ | 1.0 (on Alumina PCB) | W |
| Junction Temperature | $T_j$ | 150 | °C |
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### Key Features
* **Low Saturation Voltage:** Typically $V_{CE(sat)} = -0.4V$ at $I_c = -500mA$, which reduces power loss and heat generation.
* **High Current Capability:** Despite its small footprint, it handles up to 1A continuous current.
* **Complementary Pair:** The NPN counterpart for this transistor is the **2SD1898**.
* **Package Type:** Usually found in the **SOT-89** (MPT3) surface-mount package, which offers good thermal dissipation for its size.
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### Classification of Gain (hFE)
Transistors in this series are categorized by their DC current gain. The "R" rank indicates the following:
| Rank | Q | **R** | S |
| :--- | :--- | :--- | :--- |
| **hFE Range** | 120 - 270 | **180 - 390** | 270 - 560 |
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### Common Applications
1. **Voltage Regulation:** Used in linear regulators for noise-sensitive circuits.
2. **Power Switching:** Driving LEDs, relays, or small motors in battery-operated devices.
3. **Audio Amplification:** Low-power output stages or driver stages.
4. **DC-DC Converters:** Efficiency-focused switching roles due to low $V_{CE(sat)}$.
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### Pinout Configuration (SOT-89)
When looking at the front (labeled side) with pins pointing down:
1. **Base (B):** Left Pin
2. **Collector (C):** Middle Pin (also connected to the large heat-sink tab)
3. **Emitter (E):** Right Pin
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What is the difference between the 2SB1260-R and its NPN complement 2SD1898?
- ⤷ How does the power dissipation change when not using an alumina PCB?
- ⤷ Can this transistor be used in high-frequency switching applications above 100MHz?