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  • 2SB1386L-R-AB3-E-R

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    The **2SB1386L-R-AB3-E-R** is a high-performance PNP epitaxial planar silicon transistor designed primarily for power amplification and switching applications. This specific part number follows the UTC (Unisonic Technologies Co.) naming convention. --- ## 1. Technical Specifications Below are the primary electrical characteristics and absolute maximum ratings for the device: | Parameter | Symbol | Maximum Rating | Unit | | :--- | :---: | :---: | :---: | | Collector-Base Voltage | $V_{CBO}$ | -30 | V | | Collector-Emitter Voltage | $V_{CEO}$ | -20 | V | | Emitter-Base Voltage | $V_{EBO}$ | -6 | V | | Collector Current (DC) | $I_C$ | -5 | A | | Collector Current (Pulse) | $I_{CP}$ | -10 | A | | Collector Power Dissipation | $P_C$ | 500 | mW | | Junction Temperature | $T_J$ | +150 | °C | --- ## 2. Part Number Breakdown The suffixing provides specific details about the packaging and material composition: * **2SB1386**: The base model number (PNP Power Transistor). * **L**: Represents "Lead-Free" (Halogen Free / RoHS compliant). * **R**: Refers to the **hFE (Current Gain)** rank. Rank R typically falls within the range of **180 – 390**. * **AB3**: Indicates the package type, which is **SOT-89**. * **E**: Refers to a specific internal design or specialized characteristic code (UTC specific). * **R**: Indicates the packing method (**Tape & Reel**). --- ## 3. Key Features & Applications ### Key Features * **High Collector Current**: Capable of handling up to -5A, making it robust for power tasks. * **Low Saturation Voltage**: Typically $V_{CE(sat)} = -1.0V$ (Max) at $I_C = -4A$, which reduces power loss and heat. * **High Speed**: Suitable for fast switching circuits. * **Complementary Pair**: Often used alongside the **2SD2098** (NPN). ### Typical Applications 1. **Voltage Regulation**: Used in linear regulators or DC-DC converters. 2. **Power Switching**: Driving relays, motors, or high-power LEDs. 3. **Audio Amplification**: Output stage for small to medium power amplifiers. 4. **Battery Powered Devices**: Due to the low saturation voltage and SOT-89 compact footprint. --- ## 4. Package Dimensions (SOT-89) The **SOT-89 (AB3)** is a surface-mount package designed for heat dissipation while maintaining a small footprint. ```text Pin Configuration: 1. Base (B) 2. Collector (C) - Large Tab 3. Emitter (E) ```
    ✨ Follow-up Questions
    • What is the NPN complementary transistor for the 2SB1386?
    • How does the 'R' gain rank compare to other hFE ranks like 'Q' or 'P'?
    • What are the thermal considerations when using the SOT-89 package at 5A?