2SC5096-R,LF
AI

The **2SC5096-R,LF** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Toshiba. It is specifically designed for low-noise amplification in the VHF to UHF frequency ranges.
---
### 1. Key Technical Specifications
| Parameter | Symbol | Rating | Unit |
| :--- | :--- | :--- | :--- |
| **Collector-Base Voltage** | $V_{CBO}$ | 20 | V |
| **Collector-Emitter Voltage** | $V_{CEO}$ | 10 | V |
| **Emitter-Base Voltage** | $V_{EBO}$ | 1.5 | V |
| **Collector Current** | $I_C$ | 15 | mA |
| **Collector Power Dissipation** | $P_C$ | 100 | mW |
| **Transition Frequency** | $f_T$ | 10 | GHz |
| **DC Current Gain (hFE)** | $h_{FE}$ | 80 to 160 | (R Rank) |
---
### 2. Suffix Breakdown
Understanding the specific part number is critical for sourcing and PCB design:
* **2SC5096**: The base part number (Silicon NPN high-frequency transistor).
* **-R**: Refers to the **hFE (DC Current Gain) Classification**. The "R" rank typically falls between 80 and 160.
* **LF**: Indicates the **Lead-Free** (RoHS compliant) finish and usually refers to the tape-and-reel packaging specification.
---
### 3. Physical Characteristics
* **Package Type**: S-Mini (SOT-323 / SC-70).
* **Size**: Extremely small footprint, making it ideal for compact mobile devices.
* **Pinout**:
1. Base
2. Emitter
3. Collector
---
### 4. Application Areas
Due to its high transition frequency ($f_T$) of 10 GHz and low noise figure, this part is commonly used in:
1. **LNA (Low Noise Amplifiers)**: For GPS, Wi-Fi, and cellular front-ends.
2. **VCO (Voltage Controlled Oscillators)**: Providing stable oscillations in RF circuits.
3. **Mixers**: Frequency conversion in radio receivers.
4. **RF Pre-amplifiers**: Used in TV tuners and wireless communication handsets.
---
### 5. Schematic Symbol Example
```text
Collector (3)
|
| /
Base--|< (NPN)
(1) | \
| > Emitter (2)
```
- ⤷What are the equivalent alternative parts for the 2SC5096?
- ⤷ How does the 'R' gain rank affect the circuit's bias stability?
- ⤷ What is the typical Noise Figure (NF) for this transistor at 1 GHz?