## 2SC5658-R: Technical Overview The **2SC5658-R** is a high-frequency NPN epitaxial planar silicon transistor. It is widely used in small-signal amplification and switching applications, specifically designed for compact electronic devices due to its small surface-mount package. ### 1. Key Features * **Low Collector-Emitter Saturation Voltage:** Ensures efficient operation and low power loss. * **High Speed:** Suitable for fast switching and high-frequency amplification. * **Small Package:** Typically comes in the **VMT3** or **SOT-723** package, ideal for high-density mounting. * **Complementary Pair:** The PNP equivalent is the **2SA2029**. --- ### 2. Absolute Maximum Ratings ($T_a = 25^\circ C$) | Parameter | Symbol | Rating | Unit | | :--- | :--- | :--- | :--- | | Collector-Base Voltage | $V_{CBO}$ | 50 | V | | Collector-Emitter Voltage | $V_{CEO}$ | 50 | V | | Emitter-Base Voltage | $V_{EBO}$ | 7 | V | | Collector Current | $I_C$ | 150 | mA | | Power Dissipation | $P_D$ | 150 | mW | | Junction Temperature | $T_j$ | 150 | $^\circ C$ | --- ### 3. Electrical Characteristics The "R" suffix in **2SC5658-R** refers to the **hFE (DC Current Gain) classification**. For the "R" grade, the gain typically falls within the following range: | Property | Symbol | Range / Value | Unit | | :--- | :--- | :--- | :--- | | **DC Current Gain** | $h_{FE}$ | **180 to 390** | - | | Transition Frequency | $f_T$ | 180 (Typ.) | MHz | | Collector Cut-off Current | $I_{CBO}$ | 100 (Max) | nA | | Output Capacitance | $C_{ob}$ | 2.0 (Typ.) | pF | --- ### 4. Common Applications 1. **General Purpose Amplification:** Used in audio pre-amps or low-power signal processing. 2. **Switching:** Acting as a digital switch in portable electronics (smartphones, tablets). 3. **High-Frequency Oscillators:** Due to its 180 MHz transition frequency, it is effective in RF oscillator circuits. --- ### 5. Schematic Symbol & Footprint ```text Collector (Pin 3) | / Base --| (NPN Type) (Pin 1) \ > | Emitter (Pin 2) ```