AI

The **E-41PD-R** is an infrared (IR) photodiode specifically designed for high-speed detection and optical communication. Below is a detailed breakdown of its electronic specifications and characteristics.
---
### 1. General Overview
The E-41PD-R is a **Silicon PIN Photodiode** housed in a radial leaded package (usually a 5mm / T1-3/4 standard size). It is optimized for detecting near-infrared light and converting it into electrical current.
### 2. Technical Specifications
| Parameter | Description | Typical Value |
| :--- | :--- | :--- |
| **Material** | Semiconductor Base | Silicon (Si) |
| **Peak Sensitivity Wavelength** | $\lambda_p$ | 940 nm |
| **Spectral Range** | Detection Bandwidth | 400 nm – 1100 nm |
| **Open Circuit Voltage** | $V_{oc}$ | 0.39 V |
| **Short Circuit Current** | $I_{sc}$ | 35 $\mu$A (at 1mW/cm²) |
| **Reverse Breakdown Voltage** | $B_{vr}$ | 32 V |
| **Response Time** | Rise/Fall Time ($t_r/t_f$) | 45 ns / 45 ns |
| **Total Capacitance** | $C_t$ | 25 pF (at $V_r = 3V$) |
---
### 3. Key Electronic Characteristics
* **PIN Structure:** Unlike standard PN diodes, the PIN structure (P-layer, Intrinsic layer, N-layer) allows for a wider depletion region. This results in lower capacitance and significantly faster switching speeds, making it ideal for data transmission.
* **Visible Light Filter:** The "R" in the suffix often denotes a **Daylight Filter**. The resin mold is usually black or dark blue to block visible light interference and only allow infrared light to reach the chip.
* **Linearity:** The output current is highly linear relative to the incident light intensity, which simplifies the design of light-measuring circuits.
---
### 4. Circuit Implementation
To use the E-41PD-R effectively, it is typically used in one of two modes:
1. **Photovoltaic Mode:** The diode is used without a bias voltage. It generates a small voltage when illuminated. Used for low-speed, low-noise applications.
2. **Photoconductive Mode:** The diode is **Reverse Biased** (e.g., connected to a 5V source in reverse). This decreases response time and increases sensitivity, making it suitable for high-speed pulse detection.
#### Basic Connection Diagram
```text
[ VCC (+5V) ]
|
[ Resistor R1 ] <-- Current Limiting / Signal Output
|
+----[ Output Vout ]
|
_|_ (Cathode)
\ / E-41PD-R (Reverse Biased)
--- (Anode)
|
[ GND ]
```
---
### 5. Common Applications
* **Infrared Remote Controls:** TV, Air Conditioner, and Stereo receivers.
* **Optical Switch:** Counting objects on a conveyor belt or detecting door positions.
* **Encoders:** Measuring motor RPM via an IR slotted disc.
* **Light Curtains:** Safety barriers in industrial machinery.
- ⤷What is the difference between the E-41PD-R and a standard phototransistor?
- ⤷ How do I calculate the load resistor value for this photodiode?
- ⤷ Does temperature affect the dark current of the E-41PD-R?