The **M3H61FAD-R** is a high-performance N-Channel enhancement mode MOSFET typically utilized in power management and switching applications. It is manufactured by companies like **UBIQ (uPI Semiconductor)**. ### 1. Key Technical Specifications The following table outlines the primary electrical characteristics of the M3H61FAD-R: | Parameter | Symbol | Typical Value | | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 30V | | **Gate-Source Voltage** | $V_{GSS}$ | ±20V | | **Continuous Drain Current** | $I_D$ | ~60A (at $T_C=25^\circ C$) | | **Static Drain-Source On-Resistance** | $R_{DS(on)}$ | ~5.5 - 7.0 mΩ (at $V_{GS}=10V$) | | **Total Gate Charge** | $Q_g$ | ~15 - 20 nC | | **Package Type** | Package | PDFN3333-8L (or similar DFN) | --- ### 2. Physical Characteristics & Pinout The device usually comes in a **PDFN3.3x3.3** (Power Dual Flat No-lead) package, which is designed for high-density mounting and excellent thermal dissipation. * **Compact Footprint:** Ideal for modern motherboards and mobile devices. * **Bottom Thermal Pad:** The large metal pad on the bottom serves as the Drain connection and helps sink heat into the PCB copper layers. ### 3. Core Functional Features * **Low $R_{DS(on)}$:** The low resistance during the "on" state minimizes power loss due to heat, increasing overall system efficiency. * **High Switching Speed:** Optimized for DC-DC converters where high-frequency switching is required. * **Logic Level Compatibility:** Can be driven effectively by low-voltage gate controllers (e.g., 4.5V). --- ### 4. Typical Applications The M3H61FAD-R is commonly found in the following electronic circuits: 1. **CPU/GPU VRM:** Voltage Regulator Modules on motherboards and graphics cards. 2. **DC-DC Converters:** Point-of-load (POL) power supplies. 3. **Battery Management Systems (BMS):** Switching and protection circuits in lithium-ion battery packs. 4. **Load Switching:** Controlled power distribution in portable electronics. --- ### 5. Schematic Symbol Representation In a circuit diagram, it is represented as a standard N-Channel MOSFET: ```text Drain (D) | --+-- G ----| | (Body Diode) --+-- | Source (S) ```