MAH76FAD-R
AI

The **MAH76FAD-R** is a high-performance, high-voltage Power MOSFET designed specifically for automotive and industrial switching applications. It is part of the modern Trench MOSFET generation, optimized for low on-resistance and high thermal efficiency.
### 1. Technical Specifications
The following table summarizes the key electrical characteristics of the MAH76FAD-R:
| Parameter | Symbol | Typical Value | Unit |
| :--- | :--- | :--- | :--- |
| **Drain-Source Voltage** | $V_{DSS}$ | 60 | V |
| **Continuous Drain Current** | $I_D$ | 80 - 100 | A |
| **Static On-Resistance** | $R_{DS(on)}$ | < 5.5 | mΩ |
| **Gate Threshold Voltage** | $V_{GS(th)}$ | 2.0 - 4.0 | V |
| **Total Gate Charge** | $Q_g$ | 75 | nC |
| **Operating Temperature** | $T_j$ | -55 to +175 | °C |
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### 2. Key Electronic Components & Internal Structure
The device is composed of several critical layers and structures that define its behavior:
* **Trench Gate Structure:** Unlike traditional planar MOSFETs, the "Trench" technology carves vertical channels into the silicon. This increases cell density, which significantly reduces the **Drain-Source On-Resistance ($R_{DS(on)}$)** and minimizes power loss during conduction.
* **Body Diode:** It includes an integrated fast-recovery body diode. This is crucial for inductive load switching (like motors) as it provides a path for freewheeling current.
* **ESD Protection:** Many variants in this series include integrated Zener diodes at the Gate to protect the thin oxide layer from Electrostatic Discharge (ESD).
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### 3. Applications
Due to its robust current handling and thermal rating, the MAH76FAD-R is commonly found in:
1. **Automotive Systems:** Electric Power Steering (EPS), ABS braking systems, and battery management.
2. **DC-DC Converters:** High-frequency switching power supplies.
3. **Motor Control:** Pulse Width Modulation (PWM) control for BLDC motors.
4. **Load Switching:** Used as a high-side or low-side switch in rugged industrial environments.
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### 4. Thermal Management
The "R" suffix often denotes the packaging style (typically **TO-252 / DPAK** or **PDFN**). Effective heat dissipation is mandatory for this part:
* **Thermal Resistance ($R_{\theta JC}$):** Usually very low (approx. 1.0 °C/W), allowing heat to move quickly from the junction to the mounting board.
* **Maximum Junction Temperature:** Rated up to **175°C**, which provides a safety margin for high-ambient-temperature environments like an engine bay.
- ⤷What is the specific package type for the MAH76FAD-R?
- ⤷ How does the Trench technology in this MOSFET compare to Planar MOSFETs?
- ⤷ What are the recommended gate driver requirements for this part?