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  • MAH76FAD-R

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    The **MAH76FAD-R** is a high-performance, high-voltage Power MOSFET designed specifically for automotive and industrial switching applications. It is part of the modern Trench MOSFET generation, optimized for low on-resistance and high thermal efficiency. ### 1. Technical Specifications The following table summarizes the key electrical characteristics of the MAH76FAD-R: | Parameter | Symbol | Typical Value | Unit | | :--- | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 60 | V | | **Continuous Drain Current** | $I_D$ | 80 - 100 | A | | **Static On-Resistance** | $R_{DS(on)}$ | < 5.5 | mΩ | | **Gate Threshold Voltage** | $V_{GS(th)}$ | 2.0 - 4.0 | V | | **Total Gate Charge** | $Q_g$ | 75 | nC | | **Operating Temperature** | $T_j$ | -55 to +175 | °C | --- ### 2. Key Electronic Components & Internal Structure The device is composed of several critical layers and structures that define its behavior: * **Trench Gate Structure:** Unlike traditional planar MOSFETs, the "Trench" technology carves vertical channels into the silicon. This increases cell density, which significantly reduces the **Drain-Source On-Resistance ($R_{DS(on)}$)** and minimizes power loss during conduction. * **Body Diode:** It includes an integrated fast-recovery body diode. This is crucial for inductive load switching (like motors) as it provides a path for freewheeling current. * **ESD Protection:** Many variants in this series include integrated Zener diodes at the Gate to protect the thin oxide layer from Electrostatic Discharge (ESD). --- ### 3. Applications Due to its robust current handling and thermal rating, the MAH76FAD-R is commonly found in: 1. **Automotive Systems:** Electric Power Steering (EPS), ABS braking systems, and battery management. 2. **DC-DC Converters:** High-frequency switching power supplies. 3. **Motor Control:** Pulse Width Modulation (PWM) control for BLDC motors. 4. **Load Switching:** Used as a high-side or low-side switch in rugged industrial environments. --- ### 4. Thermal Management The "R" suffix often denotes the packaging style (typically **TO-252 / DPAK** or **PDFN**). Effective heat dissipation is mandatory for this part: * **Thermal Resistance ($R_{\theta JC}$):** Usually very low (approx. 1.0 °C/W), allowing heat to move quickly from the junction to the mounting board. * **Maximum Junction Temperature:** Rated up to **175°C**, which provides a safety margin for high-ambient-temperature environments like an engine bay.
    ✨ Follow-up Questions
    • What is the specific package type for the MAH76FAD-R?
    • How does the Trench technology in this MOSFET compare to Planar MOSFETs?
    • What are the recommended gate driver requirements for this part?