STI19NM65N
AI

The **STI19NM65N** is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. It belongs to the **MDmesh™ II** series, which utilizes a proprietary strip layout and vertical structure to minimize on-resistance and optimize switching performance.
---
### 1. Key Technical Specifications
The table below summarizes the primary electrical characteristics of the STI19NM65N:
| Parameter | Symbol | Value |
| :--- | :--- | :--- |
| Drain-Source Voltage | $V_{DS}$ | 650 V |
| Continuous Drain Current | $I_D$ | 15.5 A |
| Static Drain-Source On-Resistance | $R_{DS(on)}$ | 0.230 $\Omega$ (max) |
| Total Gate Charge | $Q_g$ | 50 nC |
| Max Power Dissipation | $P_{tot}$ | 125 W |
| Package Type | - | I²PAK (TO-222) |
---
### 2. Core Technologies & Features
The STI19NM65N is engineered for high efficiency in demanding power conversion environments:
* **MDmesh™ II Technology:** This technology reduces the $R_{DS(on)}$ per area, allowing for smaller packages to handle higher currents without excessive heating.
* **Low Input Capacitance:** It features low gate charge ($Q_g$), which facilitates faster switching speeds and reduces the power required to drive the gate.
* **High $dv/dt$ Ruggedness:** The device is highly resistant to rapid voltage changes, ensuring stability in high-frequency switching applications.
* **100% Avalanche Tested:** Each unit is tested to ensure it can withstand energy spikes (avalanche breakdowns) without failing.
---
### 3. Pin Configuration (I²PAK)
The STI19NM65N typically uses the **I²PAK** (similar to TO-220 but for surface/through-hole mounting) pinout:
1. **Gate (G):** Controls the biasing of the MOSFET.
2. **Drain (D):** Connected to the high-voltage load (usually the metal tab is also Drain).
3. **Source (S):** Connected to the common ground or current sense resistor.
---
### 4. Common Applications
Due to its high voltage rating and low on-resistance, this MOSFET is commonly found in:
* **Switch Mode Power Supplies (SMPS):** Used in the primary side for AC-DC conversion.
* **Lighting Ballasts:** High-efficiency electronic ballasts for HID or fluorescent lamps.
* **DC-DC Converters:** High-power modules for industrial and telecommunication equipment.
* **Solar Inverters:** Used in the power stage for converting DC from panels to AC.
- ⤷
What are the main differences between MDmesh II and the newer MDmesh V technology?
- ⤷ How does the RDS(on) value change as the junction temperature increases in this MOSFET?
- ⤷ Can the STI19NM65N be used as a direct replacement for the STP19NM65N?