The **UT3N06L-AE3-R** is an N-channel logic-level enhancement mode Power MOSFET manufactured by Unisonic Technologies (UTC). It is designed for high-density mounting and efficiency in switching applications. --- ### ## Technical Specifications Below are the primary electrical characteristics and physical attributes of the component: | Parameter | Symbol | Specification | | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 60V | | **Continuous Drain Current** | $I_D$ | 3A | | **Pulsed Drain Current** | $I_{DM}$ | 6A | | **Gate-Source Voltage** | $V_{GSS}$ | ±20V | | **Static Drain-Source On-Resistance** | $R_{DS(ON)}$ | 105 mΩ @ $V_{GS}=10V$ | | **Total Gate Charge** | $Q_g$ | 5.3 nC (Typical) | | **Package Type** | SOT-23-3 | AE3 (Surface Mount) | --- ### ## Key Features * **Logic-Level Drive:** The MOSFET can be fully turned on by low-level voltages (typically 4.5V to 10V), making it compatible with microcontrollers and digital logic circuits. * **Low On-Resistance:** High efficiency due to minimized power loss during conduction. * **Fast Switching:** Optimized for high-frequency DC-DC conversion. * **Halogen-Free:** The "-R" suffix indicates that the part is Lead-free and Halogen-free (RoHS compliant). --- ### ## Pin Configuration (SOT-23) The device follows the standard SOT-23 pinout for N-Channel MOSFETs: 1. **Gate (G):** Controls the switching of the MOSFET. 2. **Source (S):** Connected to the ground or negative side of the load. 3. **Drain (D):** Connected to the load. --- ### ## Common Applications * **Power Management:** Used in battery-powered portable devices. * **Load Switching:** Acting as a digital switch for LEDs, motors, or relays. * **DC-DC Converters:** High-speed switching in small power supply modules. * **Inverters:** Low-power signal inversion or amplification. --- ### ## Schematic Symbol Representation ```text Drain (D) | ---| Gate | |---> (N-Channel) (G) ---| | Source (S) ```