UT4232G-S08-R
AI

The **UT4232G-S08-R** is a high-performance Dual Complementary MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Unisonic Technologies (UTC). It integrates one N-Channel and one P-Channel MOSFET into a single SOP-8 package.
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### 1. Key Specifications
The following table outlines the fundamental electrical characteristics of the device:
| Parameter | N-Channel (N-Ch) | P-Channel (P-Ch) | Unit |
| :--- | :--- | :--- | :--- |
| **Drain-Source Voltage ($V_{DSS}$)** | 30 | -30 | V |
| **Gate-Source Voltage ($V_{GSS}$)** | $\pm$20 | $\pm$20 | V |
| **Continuous Drain Current ($I_D$)** | 8.0 | -7.0 | A |
| **Static Drain-Source On-Resistance ($R_{DS(ON)}$)** | 22 (max) | 45 (max) | m$\Omega$ |
| **Package Type** | SOP-8 | SOP-8 | - |
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### 2. Pin Configuration
The SOP-8 package allows for a compact footprint while housing two independent transistors.
1. **Pin 1:** Source 1 (S1 - N-Ch)
2. **Pin 2:** Gate 1 (G1 - N-Ch)
3. **Pin 3:** Source 2 (S2 - P-Ch)
4. **Pin 4:** Gate 2 (G2 - P-Ch)
5. **Pin 5-6:** Drain 2 (D2 - P-Ch)
6. **Pin 7-8:** Drain 1 (D1 - N-Ch)
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### 3. Key Features
* **Complementary Pair:** Combining N-Ch and P-Ch in one package simplifies H-bridge and inverter circuit designs.
* **Low On-Resistance:** Reduces power dissipation and improves efficiency in high-current applications.
* **Fast Switching:** Optimized for high-frequency PWM (Pulse Width Modulation) applications.
* **Halogen-Free:** The "G" in the part number indicates a green, halogen-free compound.
* **Taping & Reel:** The "R" suffix indicates the packaging style for automated SMT assembly.
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### 4. Common Applications
* **DC-DC Converters:** Used in synchronous rectification or buck/boost power stages.
* **Motor Control:** Ideal for small H-bridge motor drivers (forward/reverse control).
* **Load Switching:** Efficiently managing power rails in portable electronics.
* **LCD Inverters:** Handling high-speed switching for backlight modules.
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- ⤷What is the maximum operating temperature for the UT4232G-S08-R?
- ⤷ How does the N-channel Rds(on) compare to the P-channel at 4.5V gate voltage?
- ⤷ Can this MOSFET be used directly with 3.3V logic levels?