数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

L6393D Datasheet with Chat AI
  • AIauthorized

    Hello, Please ask a question about L6393D Datasheet

  • # Example questions: ➢ What is the typical slew rate (sr) of the sense comparator, and what factors might cause the internal voltage drop to be significant when considering the bootstrap driver?
    ➢ What is the relationship between the cboot capacitor value and the external power mos gate charge (qgate)? explain how selecting the appropriate cboot value impacts performance.
    ➢ What is the primary advantage of the integrated bootstrap driver in the l6393 compared to using an external fast recovery diode?

  • Part No.L6393D
    ManufacturerSTMICROELECTRONICS
    Size462 Kbytes
    Pages20 pages
    DescriptionHalf-bridge gate driver
    Datasheet Summary with AI

    1. Device Overview

    ️· Type: High Voltage Gate Driver IC
    ️· Purpose: Designed for driving N-channel power MOSFETs in various applications, especially those requiring high-side/low-side control. Suitable for driving synchronous rectifiers, full bridge converters and other similar applications.
    ️· Key Features:
    - Integrated Bootstrap Diode: Eliminates the need for an external fast recovery diode, reducing component count and potentially improving reliability.
    - High-Side/Low-Side Control: Provides drive for both high-side and low-side MOSFETs.
    - UVLO Protection: Under Voltage Lock Out for safety and reliable operation.
    - Sense Comparator for Current Monitoring.
    - ECOPACK Packages: Lead-free and environmentally friendly.

    2. Electrical Characteristics (Key Parameters)

    1. Device Overview

    ️· Type: High Voltage Gate Driver IC
    ️· Purpose: Designed for driving N-channel power MOSFETs in various applications, especially those requiring high-side/low-side control. Suitable for driving synchronous rectifiers, full bridge converters and other similar applications.
    ️· Key Features:
    - Integrated Bootstrap Diode: Eliminates the need for an external fast recovery diode, reducing component count and potentially improving reliability.
    - High-Side/Low-Side Control: Provides drive for both high-side and low-side MOSFETs.
    - UVLO Protection: Under Voltage Lock Out for safety and reliable operation.
    - Sense Comparator for Current Monitoring.
    - ECOPACK Packages: Lead-free and environmentally friendly.

    2. Electrical Characteristics (Key Parameters)

    Part No.L6393D
    ManufacturerSTMICROELECTRONICS
    Size462 Kbytes
    Pages20 pages
    DescriptionHalf-bridge gate driver
    ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

    关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
    All Rights Reserved©Alldatasheet.com


    Mirror Sites
    English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
    Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
    Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
    Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
    Family Site : ic2ic.com  |   icmetro.com