# 2SC3419

## Overview

️· Silicon NPN Epitaxial Type (PCT Process) for medium-power amplifier applications.
️· Complementary to 2SA1356.

## Maximum Ratings (Tc = 25°C)

️· Collector-Base Voltage (VCBO): 40 V
️· Collector-Emitter Voltage (VCEO): 40 V
️· Emitter-Base Voltage (VEBO): 5 V
️· Collector Current (IC): 800 mA
️· Base Current (IB): 80 mA
️· Collector Power Dissipation (PC): 1.2 W (Ta = 25°C), 5 W (Tc = 25°C)
️· Junction Temperature (Tj): 150 °C
️· Storage Temperature Range (Tstg): -55 to 150 °C

## Electrical Characteristics (Tc = 25°C)

️· Collector Cut-off Current (ICBO): 1.0 µA (max)
️· Emitter Cut-off Current (IEBO): 1.0 µA (max)
️· Collector-Emitter Breakdown Voltage (VCEO): 40 V (min)
️· DC Current Gain (hFE(1)): 70 to 240 (VCE = 2 V, IC = 50 mA)
️· DC Current Gain (hFE(2)): 13 to 60 (VCE = 2 V, IC = 0.8 A)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.25 V (typ), 0.8 V (max) (IC = 500 mA, IB = 50 mA)
️· Base-Emitter Voltage (VBE): 0.90 V (typ), 1.1 V (max) (VCE = 2 V, IC = 500 mA)
️· Transition Frequency (fT): 50 MHz (typ), 100 MHz (typ) (VCE = 2 V, IC = 0.5 A)
️· Collector Output Capacitance (Cob): 10 pF (typ) (VCB = 10 V, IE = 0, f = 1 MHz)

## Marking

️· C3419 (Part Number or abbreviation code) followed by characteristics indicator and lot number.
️· A line indicates lead (Pb)-free package/finish.

## Important Notes

️· Information subject to change.
️· For general electronics applications only.
️· Not intended for use in life-critical or safety devices.
️· Follow specified operating ranges for safe operation.
️· Adhere to handling guidelines for semiconductor devices.