2SC3419_04 datasheet(1/4 Pages) TOSHIBA

部件名	2SC3419

功能描述	Medium-Power Amplifier Applications

PDF	4 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2SC3419

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3419

Medium-Power Amplifier Applications.

• Low saturation voltage: VCE (sat) = 0.25 V (typ.)

(IC = 500 mA, IB = 50 mA)

• High collector power dissipation: PC = 1.2 W (Ta = 25°C)

• Complementary to 2SA1356

Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

40

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

800

mA

Base current

IB

80

mA

Ta = 25°C

1.2

Collector power

dissipation

Tc = 25°C

PC

5

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 40 V, IE = 0

―

1.0

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

1.0

µA

Collector-emitter breakdown voltage

VCEO

IC = 10 mA, IB = 0

40

―

V

hFE (1)

(Note)

VCE = 2 V, IC = 50 mA

70

―

240

DC current gain

hFE (2)

VCE = 2 V, IC = 0.8 A

13

60

―

Collector-emitter saturation voltage

VCE (sat)

IC = 500 mA, IB = 50 mA

―

0.25

0.8

V

Base-emitter voltage

VBE

VCE = 2 V, IC = 500 mA

―

0.90

1.1

V

Transition frequency

fT

VCE = 2 V, IC = 0.5 A

50

100

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

10

―

pF

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)

类似零件编号 - 2SC3419_04

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC3419	153Kb / 2P	NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS)
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