| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
GTVA220701FA
|
862Kb / 4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-08-18 |
|
GTVA221701FA
|
616Kb / 4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-07-27 |
|
GTVA261701FA
|
858Kb / 4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-05-29 |
 ON Semiconductor |
NCP51820
|
787Kb / 20P |
High Speed Half-Bridge Driver for GaN Power Switches
August, 2020 ??Rev. 2 |
 STMicroelectronics |
MASTERGAN4
|
396Kb / 14P |
High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT
|
 ON Semiconductor |
NCP51810
|
774Kb / 20P |
High Speed Half-Bridge Driver for GaN Power Switches
May, 2022 - Rev. 3 |
 STMicroelectronics |
MASTERGAN1
|
529Kb / 27P |
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
21-Oct-2020 |
|
MASTERGAN2
|
680Kb / 29P |
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
21-Jun-2021 |
 Rohm |
BM3G007MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |
|
BM3G015MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |