Overview
General Description
The Cypress S25FL127S device is a flash non-volatile memory product using:
■ MirrorBit technology - that stores two data bits in each memory array transistor
■ Eclipse architecture - that dramatically improves program and erase performance
■ 65 nm process lithography

This device connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL127S product offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.

Features
■ CMOS 3.0 Volt Core
■ Density
   – 128 Mbits (16 Mbytes)
■ Serial Peripheral Interface (SPI) with Multi-I/O
   – SPI Clock polarity and phase modes 0 and 3
   – Extended Addressing: 24- or 32-bit address options
   – Serial Command set and footprint compatible with
      S25FL-A,
      S25FL-K, and S25FL-P SPI families
   – Multi I/O Command set and footprint compatible with
      S25FL-P SPI family
■ READ Commands
   – Normal, Fast, Dual, Quad
   – AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address
   – Common Flash Interface (CFI) data for configuration information.
■ Programming (0.8 Mbytes/s)
   – 256- or 512-byte Page Programming buffer options
   – Quad-Input Page Programming (QPP) for slow clock systems
   – Automatic ECC -internal hardware Error Correction Code generation with single bit error correction
■ Erase (0.5 Mbytes/s)
   – Hybrid sector size option - physical set of sixteen 4-kbyte
      sectors at top or bottom of address space with all
      remaining sectors of 64 kbytes
   – Uniform sector option - always erase 256-kbyte blocks for
      software compatibility with higher density and future
      devices.
■ Cycling Endurance
   – 100,000 Program-Erase Cycles per sector, minimum
■ Data Retention
   – 20 Year Data Retention, minimum
■ Security features
   – One Time Program (OTP) array of 1024 bytes
   – Block Protection:
      – Status Register bits to control protection against program or erase of a contiguous range of sectors.
      – Hardware and software control options
   – Advanced Sector Protection (ASP)
      – Individual sector protection controlled by boot code or password
■ Cypress® 65 nm MirrorBit Technology with Eclipse Architecture
■ Supply Voltage: 2.7V to 3.6V
■ Temperature Range:
   – Industrial (-40°C to +85°C)
   – Industrial Plus (-40°C to +105°C)
   – Automotive AEC-Q100 Grade 3 (-40°C to +85°C)
   – Automotive AEC-Q100 Grade 2 (-40°C to +105°C)
■ Packages (all Pb-free)
   – 8-lead SOIC (208 mil)
   – 16-lead SOIC (300 mil)
   – 8-contact WSON 6 x 5 mm
   – BGA-24 6 x 8 mm
      – 5 x 5 ball (FAB024) and 4 x 6 ball (FAC024) footprint options
   – Known Good Die and Known Tested Die