GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES
• Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE
• All inputs and outputs are TTL compatible