Description
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

● Lead and Bromide Free

● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible

● Ultra Low Package Inductance
● Optimized for High Frequency Switching

● Ideal for CPU Core DC-DC Converters
● Optimized for both Sync.FET and some Control FET application

● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques