General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.

Distinctive Characteristics
Architecture Advantages
■ Simultaneous Read/Write operations
   — Read data from one bank while executing erase/
      program functions in other bank
   — Zero latency between read and write operations
   — Two bank architecture: large bank/small bank
      75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
   — Top and bottom boot sectors in the same device
■ Flexible sector architecture
   — CD032G: Eight 2K Double Word, Sixty-two 16K
      Double Word, and Eight 2K Double Word sectors
   — CD016G: Eight 2K Double Word, Thirty-two 16K
      Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
   — Factory locked and identifiable: 16 bytes for secure,
      random factory Electronic Serial Number; Also know
      as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
   — Interfaces to any high performance processor
   — Linear Burst Read Operation: 2, 4, and 8 double
      word linear burst with or without wrap around
■ Program Operation
   — Performs synchronous and asynchronous write
      operations of burst configuration register settings
      independently
■ Single power supply operation
   — Optimized for 2.5 to 2.75 volt read, erase, and
   program operations
■ Compatibility with JEDEC standards (JC42.4)
   — Software compatible with single-power supply Flash
   — Backward-compatible with AMD/Fujitsu Am29LV/
      MBM29LV and Am29F/MBM29F flash memories

Performance Characteristics
■ High performance read access
   — Initial/random access times of 48 ns (32 Mb) and 54
      ns (16 Mb)
   — Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
   — Burst Mode Read: 90 mA @ 75 MHz max
   — Program/Erase: 50 mA max
   — Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
   — Generates data output voltages and tolerates data
      input voltages as determined by the voltage on the
      VIO pin
   — 1.65 V to 3.60 V compatible I/O signals

Software Features
■ Persistent Sector Protection
   — Locks combinations of individual sectors and sector
      groups to prevent program or erase operations
      within that sector (requires only VCC levels)
■ Password Sector Protection
   — Locks combinations of individual sectors and sector
      groups to prevent program or erase operations
      within that sector using a user-definable 64-bit
      password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing
      multiple program command sequences
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or
      erase operation completion

Hardware Features
■ Program Suspend/Resume & Erase Suspend/
   Resume
   — Suspends program or erase operations to allow
      reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
   BY#), and Write Protect (WP#) inputs
■ ACC input
   — Accelerates programming time for higher throughput
      during system production
■ Package options
   — 80-pin PQFP
   — 80-ball Fortified BGA
   — Pb-free package option also available
   — Known Good Die