PXAC241002FC-V1-R0 数据表(PDF) - Cree, Inc

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PXAC241002FC-V1-R0 数据表 (PDF) - Cree, Inc

PXAC241002FC-V1-R0 Datasheet PDF - Cree, Inc


部件名	PXAC241002FC-V1-R0

下载	PXAC241002FC-V1-R0 下载

文件大小	279.64 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

PXAC241002FC-V1-R0 Datasheet (PDF)

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PXAC241002FC-V1-R0 Datasheet PDF - Cree, Inc


部件名	PXAC241002FC-V1-R0

下载	PXAC241002FC-V1-R0 Click to download

文件大小	279.64 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

PXAC241002FC-V1-R0 数据表 (HTML) - Cree, Inc

PXAC241002FC-V1-R0 Datasheet HTML 1Page - Cree, Inc

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PXAC241002FC-V1-R0 Datasheet HTML 8Page - Cree, Inc

类似零件编号 - PXAC241002FC-V1-R0

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC241702FCV1R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22

类似说明 - PXAC241002FC-V1-R0

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF240101S	243Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz Rev. 05, 2007-04-12
	PXAC261002FC	162Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15
	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
	PTAC240502FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz Rev. 02.3, 2016-06-21
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
	PTAC240502FC	606Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTAC240502FC_V1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Rev. 05, 2023-06-28

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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