2N5686 数据表(PDF) - ON Semiconductor

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2N5686 数据表 (PDF) - ON Semiconductor

2N5686 Datasheet PDF - ON Semiconductor


部件名	2N5686

下载	2N5686 下载

文件大小	133.86 Kbytes

页	8 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	High-Current Complementary Silicon Power Transistors

2N5686 Datasheet (PDF)

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2N5686 Datasheet PDF - ON Semiconductor


部件名	2N5686

下载	2N5686 Click to download

文件大小	133.86 Kbytes

页	8 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	High-Current Complementary Silicon Power Transistors

2N5686 数据表 (HTML) - ON Semiconductor

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2N5686 Datasheet HTML 7Page - ON Semiconductor

2N5686 Datasheet HTML 8Page - ON Semiconductor

2N5686 产品详情

These packages are designed for use in high-power amplifier and switching circuit applications.

Features
• High Current Capability - IC Continuous = 50 Amperes
• DC Current Gain - hFE = 15-60 @ IC = 25 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
• Pb-Free Packages are Available*

类似零件编号 - 2N5686

制造商	部件名	数据表	功能描述
Mospec Semiconductor	2N5686	185Kb / 4P	POWER TRANSISTORS(50A,300W)
Microsemi Corporation	2N5686	58Kb / 2P	NPN POWER SILICON TRANSISTOR
List of Unclassifed Man...	2N5686	347Kb / 8P	Power Transistors
ON Semiconductor	2N5686	151Kb / 7P	High?묬urrent Complementary Silicon Power Transistors March, 2006 ??Rev. 11
Microsemi Corporation	2N5686	126Kb / 3P	NPN POWER SILICON TRANSISTOR

类似说明 - 2N5686

制造商	部件名	数据表	功能描述
NTE Electronics	NTE2513	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE2534	22Kb / 2P	Silicon Complementary Transistors High Current Switch
	NTE29	24Kb / 2P	Silicon Complementary Transistors High Power, High Current Switch
ON Semiconductor	MJ11012	68Kb / 4P	High-Current Complementary Silicon Transistors May, 2001 ??Rev. 4
	MJ11015	121Kb / 4P	High-Current Complementary Silicon Transistors September, 2008 ??Rev. 5
	MJ11028	121Kb / 4P	High-Current Complementary Silicon Power Transistors September, 2008 ??Rev. 6
New Jersey Semi-Conduct...	2N5684	206Kb / 2P	HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	2N5684G	119Kb / 5P	High-Current Complementary Silicon Power Transistors October, 2007 - Rev. 12
New Jersey Semi-Conduct...	MJ11028	84Kb / 2P	High-Current Complementary Silicon Power Transistors
New Jersey Semi-Conduct...	MJ14001	121Kb / 2P	High-Current Complementary Silicon Power Transistors

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该公司成立于1999年，总部位于亚利桑那州凤凰城。
在半导体上，提供了广泛的电力管理，模拟和离散半导体的组合，包括电源MOSFET，二极管，整流器，电压调节器等。
该公司的产品旨在具有节能，可靠和成本效益，并用于多种应用，包括便携式电子产品，工业自动化系统，可再生能源系统和汽车电子产品。
在半导体上，致力于创新和客户满意度，并致力于提供最佳的半导体解决方案，以满足客户的需求。”

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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